ic integrated chip

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The SQ2362ES-T1_GE3 is a specific part number for a dual N-channel MOSFET manufactured by Vishay Siliconix. It can be used in various electronic circuits and systems where efficient power switching and management are required, such as power supplies, motor control, battery management, LED lighting, DC-DC converter, audio amplifiers and switching circuits and so on.

Product Details

Here below are the product attributes of this item.
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current – Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 30 V
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3