SCT3120ALGC11

ic integrated chip

100% New and Original/ In Stock

N-channel SiC power MOSFET from ROHM.Its features include low on-resistance, fast switching speed, fast reverse recovery, easy to parallel, simple to drive and Pb-free lead plating, Rohs compliant.

The SCT3120ALGC11 finds application in a variety of electronic systems, including solar inverters, DC/DC converters, switch-mode power supplies, induction heating, and motor drives.

Product Details

Here below are the product attributes of this item. Package: Tube; Product Status: Active; FET Type: N-Channel; Technology: SiCFET (Silicon Carbide); Drain to Source Voltage (Vdss):650 V; Current – Continuous Drain (Id) @ 25°C:21A (Tc); Drive Voltage (Max Rds On, Min Rds On):18V; Rds On (Max) @ Id, Vgs:156mOhm @ 6.7A, 18V; Vgs(th) (Max) @ Id:5.6V @ 3.33mA; Gate Charge (Qg) (Max) @ Vgs:38 nC @ 18 V; Vgs (Max):+22V, -4V; Input Capacitance (Ciss) (Max) @ Vds:460 pF @ 500 V; Power Dissipation (Max):103W (Tc); Operating Temperature:175°C (TJ); Mounting Type: Through Hole; Supplier Device Package: TO-247N; Package / Case: TO-247-3;