ic integrated chip

100% New and Original/ In Stock

This component is specifically designed for use in radio frequency (RF) power amplifier applications in various wireless communication systems.
The MRF5812GR2 is optimized for high-frequency operation, typically in the range of several gigahertz (GHz), making it suitable for applications in the microwave and RF frequency bands.
With its high-frequency operation, high-power amplification capabilities, and broadband performance, the MRF5812GR2 is suitable for a wide range of RF power amplifier applications including cellular base stations, radar systems, wireless communication infrastructure, and satellite communication systems.

Product Details

Here below are the product attributes of this item.
Part Status: Obsolete
Transistor Type: NPN
Voltage – Collector Emitter Breakdown (Max):15V
Frequency – Transition:5GHz
Noise Figure (dB Typ @ f):2dB ~ 3dB @ 500MHz
Gain:13dB ~ 15.5dB
Power – Max:1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 5V
Current – Collector (Ic) (Max):200mA
Mounting Type: Surface Mount
Package / Case:8-SOIC (0.154″, 3.90mm Width)
Supplier Device Package:8-SO